super fast recovery diode rf04ua2d ? serie s ? dimensions (unit : mm) ? land size figur e (unit : mm) standard fast recover y ? application s high frequency rectificatio n ? features ? structur e ? taping dimensions (unit : mm) ? absolute maximum ratings (ta=25 ? c) symbol v rm v r t j tstg (* standard of per diode ) ? electrical characteristics (tj=25 ? c) symbol unit forward voltage v f v reverse current i r ? a reverse recovery time trr ns parameter storage temperature -40 to +150 ? c a one cycle peak value, tj=25 ? c junction temperature 150 ? c forward current surge peak i fsm 60hz half sin wave, non-repetitive 1 0.4 a 60hz half sin wave,resistive load tc=130 ? c average rectified forward current io/2 glass epoxy substrate mounted ta=25 ? c reverse voltage direct voltage 200 v limits uni t repetitive peak reverse voltage 200 v parameter conditions 10 i f =0.5a,i r =1a,irr=0.25i r 11 25 v r =200v 0.01 max. i f =0.2 a 0.86 0.98 conditions min. typ. 2)high reliability ? constructio n silicon epitaxial plane r 1)surface mounting type (tsmd6) tsmd6 0.8 1.0 min. 0.45 0.35 1.9 0.7 0.95 0.45 0.35 2.4 0.95 1.10.08 3.20.08 0.30.1 3.20.08 4.00.1 4.00.1 2.00.05 1.550.1 0 3.50.05 1.750.1 8.00.2 1.10.1 3.20.08 00.5 5.50.2 (1) (2) (3) (6) (5) (4) 1/3 2011.05 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rf04ua2d ? electrical characteristics curves 1 10 100 1000 10000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) on glass-epoxy board 1ms im=10ma i f =1a 300 ? s time 0 5 10 15 20 25 30 ave : 21.9kv c=100pf r=1.5k ? c=200pf r=0 ? ave : 3.9kv 1 10 100 1000 1 10 100 t ifsm 1 10 100 1000 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 5 10 15 20 25 30 ave:10.2ns tj=25 c i f =0.5a i r =1a irr=0.25i r n=10pcs 0 10 20 30 ave:10.2a 8.3ms ifsm 1cyc 0 10 20 30 ave:10.9pf tj=25 c f=1mhz v r =0v n=10pcs 0.1 1 10 100 1000 830 840 850 860 870 880 1 10 100 0 5 10 15 20 25 30 f=1mhz electrostatic discharge test esd(kv) esd dispersion map 0 1 10 100 1000 10000 0 50 100 150 200 tj=25 ? c tj=125 ? c tj=75 ? c tj=150 ? c 0.01 0.1 1 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 forward voltage : v f (v) v f -i f characteristics forward current : i f (a) reverse current : i r (na) reverse voltage : v r (v) v r -i r characteristics capacitance between terminals : ct(pf) reverse voltage : v r (v) v r -ct characteristics v f dispersion map forward voltage : v f (mv) reverse current : i r (na) i r dispersion map capacitance between terminals : ct(pf) ct dispersion map i fsm disresion map peak surge forward current : i fsm (a) peak surge forward current : i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current : i fsm (a) time : t(ms) i fsm -t characteristics time : t(s) rth-t characteristics transient thaermal impedance : rth ( ? c/w) trr dispersion map reverse recovery time : trr(ns) tj=25 ? c v r =200v n=30pcs ave:1.3na ave : 851.3mv tj=25 ? c i f =0.2a n=30pcs tj=125 ? c tj=25 ? c tj=150 ? c tj=75 ? c 2/3 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf04ua2d 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0 306090120150 d.c. d=0.5 d=0.1 d=0.05 half sin wave d=0.8 d=0.2 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0 306090120150 d.c. d=0.2 d=0.05 half sin wave d=0.8 d=0.5 d=0.1 0 0.05 0.1 0.15 0.2 0.25 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 forward power dissipation : pf(w) average rectified forward current : io(a) io-pf characteristics ambient temperature : ta( ? c) derating curve"(io-ta) average rectified forward current : io(a) average rectified forward current : io(a) case temparature : tc( ? c) derating curve(io-tc) t tj=150 ? c d=t/t t v r io v r =200v 0a 0v t d=t/t t v r io v r =200v 0a 0v tj=150 ? c 3/3 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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